Характеристики
Техническая спецификация
Manufacturer | Infineon Technologies |
Series | — |
Part Status | Active |
IGBT Type | — |
Configuration | Half Bridge |
Voltage — Collector Emitter Breakdown (Max) | 1200V |
Current — Collector (Ic) (Max) | 105A |
Power — Max | 625W |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 75A |
Current — Collector Cutoff (Max) | 1.5mA |
Input Capacitance (Cies) @ Vce | 5.5nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Описание
IGBT 2 MED POWER 34MM-1 — IGBT Module Half Bridge 1200V 105A 625W Chassis Mount Module
IGBT модули BSM75GB120DN2HOSA1