Характеристики
IGBT MODULE, H BRIDGE 600V
Transistor Type IGBT
Transistor Polarity N
Voltage, Vces 600V
Current Ic Continuous a Max 20A
Voltage, Vce Sat Max 2.7V
Case Style SEMITOP 2
Collector-to-Emitter Breakdown Voltage 600V
Current Ic Continuous b Max 14A
Current Ic av 20A
Current, Icm Pulsed 22A
External Depth 28mm
Fixing Centres 38mm
Fixing Hole Diameter 2mm
Power, Pd 1900W
SMD Marking SEMITOP2
Temperature, Current 25 C
Time, Rise 50ns
Transistors, No. of 4
Width, External 40.5mm
Voltage 600V